The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Jul. 30, 2021
Kioxia Corporation, Tokyo, JP;
SK Hynix Inc., Icheon-si, KR;
Taiga Isoda, Seoul, KR;
Young Min Eeh, Seongnam-si, KR;
Tadaaki Oikawa, Seoul, KR;
Eiji Kitagawa, Seoul, KR;
Kazuya Sawada, Seoul, KR;
Jin Won Jung, Icheon-si, KR;
Jung Hyeok Kwak, Icheon-si, KR;
Kioxia Corporation, Tokyo, JP;
SK HYNIX INC., Gyeonggi-Do, KR;
Abstract
In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.