The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12501837 B1

Date of Patent:

Dec. 16, 2025

Filed:

Sep. 12, 2022

Magnetic memory device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Eiji Kitagawa, Seoul, KR;

Young Min Eeh, Seongnam-si, KR;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

William B Partridge

Assistant Examiner:

Alexandre X Ramirez

Int. Cl.

CPC ...

H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);

U.S. Cl.

CPC ...

H10N 50/80 (2023.02); H10B 61/10 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02);

Abstract

In general, according to one embodiment, a magnetic memory device includes a magnetoresistive effect element. The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opposite to the second non-magnetic layer with respect to the layer stack and contains a metallic oxide. The layer stack includes a fourth non-magnetic layer being in contact with the third non-magnetic layer and containing platinum (Pt).

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