The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2022

Filed:

Mar. 10, 2020
Applicants:

Kioxia Corporation, Tokyo, JP;

SK Hynix Inc., Icheon-si, KR;

Inventors:

Taiga Isoda, Seoul, KR;

Eiji Kitagawa, Seoul, KR;

Young Min Eeh, Seongnam-si, KR;

Tadaaki Oikawa, Seoul, KR;

Kazuya Sawada, Seoul, KR;

Kenichi Yoshino, Seongnam-si, KR;

Jong Koo Lim, Icheon-si, KR;

Ku Youl Jung, Seoul, KR;

Guk Cheon Kim, Icheon-si, KR;

Assignees:

KIOXIA CORPORATION, Tokyo, JP;

SK HYNIX INC., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); H01F 10/3286 (2013.01); H01L 27/224 (2013.01); H01L 27/228 (2013.01);
Abstract

According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.


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