Yeoju-si, South Korea

Guk Cheon Kim

USPTO Granted Patents = 6 

Average Co-Inventor Count = 8.0

ph-index = 2

Forward Citations = 23(Granted Patents)


Location History:

  • Yeoju-si, KR (2018)
  • Gyeonggi-do, KR (2023)
  • Icheon-si, KR (2022 - 2024)

Company Filing History:


Years Active: 2018-2024

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6 patents (USPTO):

Title: Guk Cheon Kim: Innovator in Magnetoresistive Memory Technology

Introduction

Guk Cheon Kim is a prominent inventor based in Yeoju-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 6 patents. His work focuses on advanced technologies that enhance the performance and efficiency of electronic devices.

Latest Patents

Among his latest innovations is a magnetoresistive memory device. This device features a first ferromagnetic layer, a stoichiometric first layer, and a first insulator positioned between the first ferromagnetic layer and the first layer. Additionally, it includes a second ferromagnetic layer situated between the first insulator and the first layer, along with a non-stoichiometric second layer that contacts both the second ferromagnetic layer and the first layer. Another notable patent is for an electronic device that incorporates a semiconductor memory. This semiconductor memory consists of a multilayer synthetic anti-ferromagnetic (Multi SAF) structure, which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between them. The spacer layer is designed with n non-magnetic layers and n-1 magnetic layers, which are alternately stacked to facilitate antiferromagnetic exchange coupling.

Career Highlights

Guk Cheon Kim has worked with leading companies in the technology sector, including SK Hynix Inc. and Kioxia Corporation. His experience in these organizations has allowed him to develop cutting-edge memory technologies that are crucial for modern electronic devices.

Collaborations

Throughout his career, Guk Cheon Kim has collaborated with notable professionals in the field, including Kazuya Sawada and Jong Koo Lim. These partnerships have contributed to the advancement of innovative memory solutions.

Conclusion

Guk Cheon Kim's contributions to magnetoresistive memory technology and his collaborations with industry leaders highlight his role as a key innovator in the field. His patents reflect a commitment to enhancing electronic device performance, making him a significant figure in the world of technology.

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