The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Aug. 12, 2020
SK Hynix Inc., Icheon-si, KR;
Tae Young Lee, Icheon-si, KR;
Guk Cheon Kim, Icheon-si, KR;
Soo Gil Kim, Icheon-si, KR;
Min Seok Moon, Icheon-si, KR;
Jong Koo Lim, Icheon-si, KR;
Sung Woong Chung, Icheon-si, KR;
SK HYNIX INC., Icheon-si, KR;
Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a multilayer synthetic anti-ferromagnetic (Multi SAF) structure including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer layer may include n non-magnetic layers and n−1 magnetic layers that are disposed such that each of the n non-magnetic layers and each of the n−1 magnetic layers are alternately stacked, wherein n indicates an odd number equal to or greater than 3, wherein the n−1 magnetic layers and n non-magnetic layers may be configured to effectuate an antiferromagnetic exchange coupling with at least one of the first ferromagnetic layer and the second ferromagnetic layer.