The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Sep. 12, 2016
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Daisuke Watanabe, Seoul, KR;
Yang Kon Kim, Incheon-si, KR;
Makoto Nagamine, Seoul, KR;
Youngmin Eeh, Seongnam-si, KR;
Koji Ueda, Seoul, KR;
Toshihiko Nagase, Seoul, KR;
Kazuya Sawada, Seoul, KR;
Guk Cheon Kim, Yeoju-si, KR;
Bo Mi Lee, Suwon-si, KR;
Won Joon Choi, Seoul, KR;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
SK HYNIX, INC., Icheon-si, Gyeonggi-Do, KR;
Abstract
According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.