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For the Inventor, By the Inventor

Seoul, South Korea

Youngmin Eeh

This inventor holds 33 USPTO granted patents and 11 published patent applications, primarily in Magnetic Memory Devices. Top assignees: Toshiba Memory Corporation, Skhynix Inc., Kabushiki Kaisha Toshiba. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Youngmin Eeh. Retrieved from https://idiyas.com/inventor/youngmin-eeh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 100.0

Average Co-Inventor Count = 6.5

ph-index = 12

Forward Citations = 260(Granted Patents)


Location History:

  • Seoul, KR (2015 - 2018)
  • Kawagoe, JP (2015 - 2018)
  • Gyeonggi-do, KR (2018 - 2019)
  • Tokyo, JP (2019 - 2020)
  • Seongnam-si, KR (2018 - 2024)
  • Seongnam-si Gyeonggi-do, KR (2024)

Company Filing History:

goldMedal15 out of 2,955 
 
Toshiba Memory Corporation
 patents
silverMedal8 out of 11,659 
 
Skhynix Inc.
 patents
bronzeMedal6 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
4. 4 out of 3,189 
 
Kioxia Corporation
 patents
5. 8 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2015-2025

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Areas of Expertise:
Magnetic Memory Device
Magnetoresistive Memory
Semiconductor Device
Rare Earth Oxide Layer
Electronic Device
Memory Device
Magnetoresistive Element
Fabrication Method
Tunneling Magnetoresistive
Ferromagnetic Layer
Manufacturing Method
Magnetoresistance Effect
33 patents (USPTO):Explore Patents
1. 12356866 - Magnetic memory device (2025-07-08),
2. 12284811 - Magnetic memory device (2025-04-21),
3. 12089505 - Magnetic memory device (2024-09-10),
4. 12063869 - Magnetic memory device (2024-08-13),
5. 11201189 - Semiconductor device having rare earth oxide layer and method of manufacturing the same (2021-12-14),
6. 10586917 - Electronic device and method for fabricating the same (2020-03-10),
7. 10573802 - Magnetic memory device (2020-02-25),
8. 10510950 - Magnetoresistive memory device (2019-12-17),
9. 10490732 - Magnetic memory device with sidewall layer containing boron and manufacturing method thereof (2019-11-26),
10. 10263178 - Magnetic memory device (2019-04-16),
11. 10203380 - Electronic device (2019-02-12),
12. 10170691 - Electronic device and method for fabricating the same (2019-01-01),
13. 10170519 - Magnetoresistive element and memory device (2019-01-01),
14. 10153423 - Electronic device (2018-12-11),
15. 10103318 - Magnetoresistive element (2018-10-16),

Title: Youngmin Eeh: Pioneering Innovation in Semiconductor Technology

Introduction:

Youngmin Eeh, a visionary inventor based in Seoul, KR, is a trailblazer in the world of technology. With 29 patents to his name, his relentless pursuit of excellence and passion for innovation continues to inspire the next generation of inventors and entrepreneurs.

Latest Patents:

Among his latest patents is a groundbreaking "Semiconductor device having rare earth oxide layer" and "Electronic device and method for fabricating the same." These innovations showcase his expertise in developing cutting-edge solutions in the field of semiconductor technology.

Career Highlights:

Youngmin Eeh has made significant contributions to the industry, with notable stints at renowned companies like Toshiba Memory Corporation. His expertise in semiconductor devices and fabrication methods has garnered recognition within the tech community.

Collaborations:

Throughout his career, Youngmin Eeh has collaborated with esteemed professionals in the field, including coworkers such as Toshihiko Nagase and Daisuke Watanabe. These collaborations have led to the development of innovative technologies that have reshaped the landscape of the semiconductor industry.

Conclusion:

In conclusion, Youngmin Eeh's dedication to pushing the boundaries of innovation in semiconductor technology serves as a beacon of inspiration for inventors and entrepreneurs worldwide. His inventive spirit and technological prowess continue to drive positive change, cementing his legacy as a pioneer in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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