The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Sep. 16, 2016
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Yasuyuki Sonoda, Seoul, KR;
Daisuke Watanabe, Seoul, KR;
Masatoshi Yoshikawa, Seoul, KR;
Youngmin Eeh, Seongnam-si, KR;
Shuichi Tsubata, Seoul, KR;
Toshihiko Nagase, Seoul, KR;
Yutaka Hashimoto, Seoul, KR;
Kazuya Sawada, Seoul, KR;
Kazuhiro Tomioka, Seoul, KR;
Kenichi Yoshino, Seoul, KR;
Tadaaki Oikawa, Seoul, KR;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 27/224 (2013.01); H01L 43/12 (2013.01); H01L 45/124 (2013.01); H01L 27/228 (2013.01);
Abstract
According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).