Average Co-Inventor Count = 6.2

ph-index = 4

Forward Citations = 57(Granted Patents)

Location History:

Kawasaki, JP (2012 - 2013)
Sunto-Gun, JP (2013)
Chiba, JP (2015)
Kimitsu, JP (2016)
Seoul, KR (2015 - 2019)
Kimitsu Chiba, JP (2018 - 2019)

Company Filing History:

11 out of 52,711

Kabushiki Kaisha Toshiba

patents

4 out of 2,955

Toshiba Memory Corporation

patents

1 out of 662

Toshiba Lighting & Technology Corporation

5. 3 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2012-2019

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10490732 - Magnetic memory device with sidewall layer containing boron and manufacturing method thereof (2019-11-26),

2. 10305025 - Magnetic memory device (2019-05-28),

3. 10230042 - Magnetoresistive element and method of manufacturing the same (2019-03-12),

4. 9882119 - Magnetic memory device (2018-01-30),

5. 9653138 - Magnetic memory and method of writing data (2017-05-16),

6. 9647034 - Magnetoresistive memory device and manufacturing method of the same (2017-05-09),

7. 9590174 - Magnetoresistive memory device and manufacturing method of the same (2017-03-07),

8. 9406871 - Magnetoresistive element and method of manufacturing the same (2016-08-02),

9. 9368717 - Magnetoresistive element and method for manufacturing the same (2016-06-14),

10. 9269890 - Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer (2016-02-23),

11. 9236563 - Magnetic memory device and method of manufacturing the magnetic memory device (2016-01-12),

12. 9123879 - Magnetoresistive element and method of manufacturing the same (2015-09-01),

13. 9076960 - Magnetic memory element (2015-07-07),

14. 8547737 - Magnetoresistive element and magnetic memory (2013-10-01),

15. 8530887 - Magnetoresistive element, method of manufacturing the same, and magnetic memory (2013-09-10),

Title: The Innovative Contributions of Yutaka Hashimoto in Magnetic Memory Devices

Introduction

Yutaka Hashimoto is a distinguished inventor based in Seoul, South Korea, renowned for his significant contributions to the field of magnetic memory devices. With an impressive portfolio of 18 patents, his work continues to influence advancements in memory technology.

Latest Patents

Among his latest inventions, Hashimoto developed a magnetic memory device featuring a sidewall layer containing boron. This innovative design includes a stacked structure composed of a first magnetic layer, a second magnetic layer, and a nonmagnetic layer placed between them, with a sidewall insulating layer that enhances performance. Additionally, his contributions encompass another magnetic memory device that allows a first magnetic layer to exhibit varying magnetization states, thereby optimizing memory efficiency.

Career Highlights

Hashimoto's professional journey includes pivotal roles at esteemed institutions such as Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His expertise in magnetic memory technology has been instrumental in the development of cutting-edge memory solutions.

Collaborations

Throughout his career, Yutaka has collaborated with notable professionals in the industry, including Tadashi Kai and Katsuya Nishiyama. These partnerships have fostered innovative ideas and led to the successful realization of complex projects.

Conclusion

Yutaka Hashimoto's contributions to the field of magnetic memory devices underscore his status as a leading inventor. With a total of 18 patents to his name, his work continues to shape the future of memory technology, making him a significant figure in the world of innovations and inventions.

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