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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9647034 B1

PDFFull Text
Date of Patent:
May. 09, 2017

Filed:

Mar. 09, 2016

Magnetoresistive memory device and manufacturing method of the same

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Masahiko Nakayama, Kawasaki Kanagawa, JP;

Yutaka Hashimoto, Seoul, KR;

Yasuyuki Sonoda, Seoul, KR;

Tadashi Kai, Seoul, KR;

Kenji Noma, Yokkaichi Mie, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 29/82 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

According to one embodiment, a magnetoresistive memory device includes a stacked layer structure includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on the first magnetic layer, which is opposite the nonmagnetic layer. The third magnetic layer includes a first magnetic material portion and a second magnetic material portion provided between the stacked layer structure and the first magnetic material portion. The saturation magnetization of the second magnetic material portion is smaller than that of the first magnetic material portion.

Find Patent Forward Citations

Nakayama, Masahiko. (2017). Magnetoresistive memory device and manufacturing method of the same (U.S. Patent No. 9647034). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9647034

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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