Yokohama, Japan

Kenji Noma

This inventor holds 20 USPTO granted patents, primarily in Magnetic Memory Technology. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation, Other. Active years: 2013-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenji Noma. Retrieved from https://idiyas.com/inventor/kenji-noma-jk5nashd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 80.0

Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 47(Granted Patents)


Location History:

  • Kanagawa-ken, JP (2014)
  • Yokkaichi Mie, JP (2017)
  • Kanagawa, JP (2017)
  • Yokohama, JP (2013 - 2019)
  • Yokohama Kanagawa, JP (2016 - 2019)
  • Seoul, KR (2019)

Company Filing History:


Years Active: 2013-2019

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Areas of Expertise:
Magnetic Memory Device
Magnetoresistive Effect Element
Nonvolatile Memory Device
Manufacturing Method
Magnetoresistive Element
Buffer Layer
Memory Device
Controlling Method
Semiconductor Device
Memory Manufacturing
Element Manufacturing
20 patents (USPTO):Explore Patents

Title: Kenji Noma: A Pioneer in Magnetic Memory Technology

Introduction

Kenji Noma is a prominent inventor based in Yokohama, Japan, recognized for his significant contributions to the field of magnetic memory devices. With a remarkable portfolio of 20 patents, Noma has showcased his expertise and innovative spirit, particularly in the realm of data storage and memory technology.

Latest Patents

Among Noma's notable patents are revolutionary designs for magnetic memory devices. One of his latest inventions relates to a magnetic memory device featuring a stacked structure with a first magnetic layer that has a variable magnetization direction. This device also includes a nonmagnetic layer and a second magnetic layer with a fixed magnetization direction, meticulously designed so that their patterns conform to one another. Another recent patent involves a magnetic memory device that consists of a semiconductor substrate and a magnetoresistive element, which comprises a storage layer, tunnel barrier layer, and a reference layer with a magnetization direction perpendicular to the substrate's principal surface. This innovative design integrates a magnetic field generation section, further enhancing its functionality.

Career Highlights

Throughout his career, Kenji Noma has been associated with prominent companies in the technology sector, including Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His work has greatly influenced the advancement of magnetic memory technologies, paving the way for new applications in various electronic devices.

Collaborations

Noma has collaborated with several talented individuals in the technology field, including Shinya Kobayashi and Eiji Kitagawa. These partnerships have fostered the exchange of ideas and innovation, culminating in the development of groundbreaking technologies that enhance memory storage capabilities.

Conclusion

Kenji Noma's dedication to innovation in magnetic memory technology has solidified his position as a leading inventor. With a robust patent portfolio and a dynamic career, his contributions continue to impact the future of data storage solutions, highlighting the essential role inventors play in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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