The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Jul. 15, 2016
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Kenji Noma, Yokohama, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A magnetic memory device includes a semiconductor substrate; a magnetoresistive element provided on the semiconductor substrate. The magnetoresistive element includes a storage layer, a tunnel barrier layer, and a reference layer which are stacked, the reference layer having a magnetization direction perpendicular to a principal surface of the semiconductor substrate. The magnetic memory device further includes a magnetic field generation section provided away from the magnetoresistive element and configured to generate a magnetic field perpendicular to the principal surface of the semiconductor substrate. The semiconductor substrate, the magnetoresistive element and the magnetic field generation section are integrated as one unit.