The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9231195 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 05, 2016

Filed:

Sep. 06, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Shinya Kobayashi, Yokohama, JP;

Kenji Noma, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 27/228 (2013.01);
Abstract

According to one embodiment, a magnetic memory comprises an electrode, a memory layer which is formed on the electrode and has magnetic anisotropy perpendicular to a film plane, and in which a magnetization direction is variable, a tunnel barrier layer formed on the memory layer, and a reference layer which is formed on the tunnel barrier layer and has magnetic anisotropy perpendicular to the film plane, and in which a magnetization direction is invariable. The memory layer has a positive magnetostriction constant on a side of the electrode, and a negative magnetostriction constant on a side of the tunnel barrier layer.


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