The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Feb. 13, 2015
Applicants:

Takashi Nakazawa, Seongnam-si, KR;

Yoshiaki Asao, Yokkaichi, JP;

Takeshi Kajiyama, Seoul, KR;

Kenji Noma, Yokohama, JP;

Inventors:

Takashi Nakazawa, Seongnam-si, KR;

Yoshiaki Asao, Yokkaichi, JP;

Takeshi Kajiyama, Seoul, KR;

Kenji Noma, Yokohama, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/00 (2006.01); H01L 27/00 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 27/24 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 27/2463 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.10); H01L 43/12 (2013.01); G11C 11/161 (2013.01);
Abstract

According to one embodiment, a magnetic memory including an isolation region with an insulator in a trench is disclosed. The isolation region defines active areas extending in a 1st direction and having 1st and 2nd active areas, an isolation region extending in a 2nd direction perpendicular to the 1st direction exists between the 1st and 2nd active areas. 1st and 2nd word lines extending in the 2nd direction are buried in a surface of semiconductor substrate. 1st and 2nd select transistors connected to the word lines are on the 1st active area. 1st and 2nd variable resistance elements connected to drain regions of the 1st and 2nd select transistors are on the 1st active area.


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