The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jul. 23, 2015
Masahiko Nakayama, Seoul, KR;
Masatoshi Yoshikawa, Seoul, KR;
Tadashi Kai, Seoul, KR;
Yutaka Hashimoto, Seoul, KR;
Masaru Toko, Seoul, KR;
Hiroaki Yoda, Seoul, KR;
Jae Geun OH, Icheon-si, KR;
Keum Bum Lee, Icheon-si, KR;
Choon Kun Ryu, Seoul, KR;
Hyung Suk Lee, Icheon-si, KR;
Sook Joo Kim, Icheon-si, KR;
Masahiko Nakayama, Seoul, KR;
Masatoshi Yoshikawa, Seoul, KR;
Tadashi Kai, Seoul, KR;
Yutaka Hashimoto, Seoul, KR;
Masaru Toko, Seoul, KR;
Hiroaki Yoda, Seoul, KR;
Jae Geun Oh, Icheon-si, KR;
Keum Bum Lee, Icheon-si, KR;
Choon Kun Ryu, Seoul, KR;
Hyung Suk Lee, Icheon-si, KR;
Sook Joo Kim, Icheon-si, KR;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
SK HYNIX INC., Ichenon-Si, Gyeonggi-Do, KR;
Abstract
According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.