Average Co-Inventor Count = 4.6

ph-index = 21

Forward Citations = 1,518(Granted Patents)

Forward Citations (Not Self Cited) = 1,416(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kawasaki, JP (2000 - 2002)
Kanagawa-ken, JP (2001 - 2011)
Yokohama, JP (2001 - 2014)
Seongnam-si, KR (2021)
Seoul, KR (2015 - 2022)
Yokkaichi Mie, JP (2023)
Tokyo, JP (2024)

Company Filing History:

90 out of 52,735

Kabushiki Kaisha Toshiba

patents

14 out of 2,955

Toshiba Memory Corporation

National Institute of Advanced Industrial Science and Technology

7. 4 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 2000-2025

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Areas of Expertise:

Magnetic Memory

Magnetoresistive Elements

Semiconductor Devices

Nonvolatile Memory

Resistance Variable Devices

Magnetic Storage Devices

Selector Devices

Manufacturing Methods

Chalcogen-Containing Layers

Magnetoresistive Random Access Memory

Magnetoresistance Effect Elements

Thin-Film Insertion Layers

115 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12336191 - Magnetic memory including transistors and magnetoresistive elements respectively connected between a conductive plate and a conductive line and additional transistors each connected between the conductive line and another conductive line (2025-06-17),

2. 12243572 - Magnetic memory device (2025-03-04),

3. 12170106 - Magnetic memory device (2024-12-17),

4. 12144267 - Selector device and semiconductor storage device (2024-11-12),

5. 12033718 - Semiconductor device (2024-07-09),

6. 11600772 - Resistance variable device with chalcogen-containing layer (2023-03-07),

7. 11322189 - Magnetic memory device (2022-05-03),

8. 11018187 - Magnetic memory device (2021-05-25),

9. 10937947 - Magnetic memory device with a nonmagnet between two ferromagnets of a magnetoresistive effect element (2021-03-02),

10. 10490732 - Magnetic memory device with sidewall layer containing boron and manufacturing method thereof (2019-11-26),

11. 10461245 - Magnetic memory device and method of manufacturing the same (2019-10-29),

12. 10388855 - Magnetic memory device (2019-08-20),

13. 10388854 - Magnetic memory device (2019-08-20),

14. 10304509 - Magnetic storage device (2019-05-28),

15. 10230042 - Magnetoresistive element and method of manufacturing the same (2019-03-12),

Title: The Innovative Journey of Masatoshi Yoshikawa

Introduction: Masatoshi Yoshikawa, a pioneering inventor hailing from Yokohama, Japan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Masatoshi Yoshikawa holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Masatoshi Yoshikawa has been recognized for his inventive spirit and problem-solving skills. His work has not only revolutionized industries but has also inspired a new generation of inventors to think outside the box.

Collaborations: Masatoshi Yoshikawa has collaborated with leading research institutions and tech companies to further develop his inventions and bring them to market. His ability to work in multidisciplinary teams has led to the successful implementation of cutting-edge technologies.

Conclusion: In conclusion, Masatoshi Yoshikawa's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of inventions. His impact on the technological landscape is profound, and his legacy will continue to inspire future generations of inventors.

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