The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2024

Filed:

Feb. 28, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yoshiaki Asao, Kawasaki Kanagawa, JP;

Masatoshi Yoshikawa, Tokyo, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 5/08 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 5/08 (2013.01); G11C 11/1673 (2013.01); H10B 61/10 (2023.02); H10B 61/20 (2023.02); H10N 50/10 (2023.02);
Abstract

According to one embodiment, a magnetic memory device includes first to third conductor layers, and a three-terminal-type memory cell connected to the first to third conductor layers. The first memory cell includes a fourth conductor layer, a magnetoresistance effect element, a two-terminal-type first switching element, and a two-terminal-type second switching element. The fourth conductor layer includes a first portion connected to the first conductor layer, a second portion connected to the second conductor layer, and a third portion which is connected to the third conductor layer. The magnetoresistance effect element is connected between the third conductor layer and the fourth conductor layer. The first switching element is connected between the second conductor layer and the fourth conductor layer. The second switching element is connected between the first conductor layer and the third conductor layer.


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