The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388854 B1

Date of Patent:

Aug. 20, 2019

Filed:

Mar. 12, 2018

Magnetic memory device

Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Masatoshi Yoshikawa, Seoul, KR;

Shuichi Tsubata, Seoul, KR;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Victoria K Hall

Int. Cl.

CPC ...

H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);

U.S. Cl.

CPC ...

H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 27/228 (2013.01);

Abstract

According to one embodiment, a magnetic memory device includes a stacked structure, the stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the nonmagnetic layer comprises a structure in which a first oxide layer formed of a first metal oxide and a second oxide layer formed of a second metal oxide having a relative dielectric constant greater than a relative dielectric constant of the first metal oxide are stacked.

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