Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Other

Skhynix Inc.

National Institute of Advanced Industrial Science and Technology

Tohoku University

Masatoshi Yoshikawa

Hiroaki Yoda

Masashi Sahashi

Hitoshi Iwasaki

Tatsuya Kishi

Katsuhiko Koui

Hiromi Yuasa

Toshihiko Nagase

Eiji Kitagawa

Masayuki Takagishi

Yuzo Kamiguchi

Tadashi Kai

Masahiko Nakayama

Shuichi Tsubata

Tadaomi Daibou

Katsuya Nishiyama

Tomohiko Nagata

Kazuhiro Tomioka

Makoto Nagamine

Satoshi Seto

Takeo Sakakubo

Hideaki Fukuzawa

Susumu Hashimoto

Hisanori Aikawa

Tomomi Funayama

Tomomasa Ueda

Naoharu Shimomura

Kohichi Tateyama

Kazuhiro Saito

Akio Hori

Hiromi Fuke

Sumio Ikegawa

Yuuzo Kamiguchi

Yasuyuki Sonoda

Yutaka Hashimoto

Shin-ichi Nakamura

Michiko Hara

Takeshi Kajiyama

Yuichi Osawa

Yuichi Ohsawa

Yoshiaki Asao

Minoru Amano

Keiji Hosotani

Masaru Toko

Kenji Noma

Kuniaki Sugiura

Jyunichi Ozeki

Takashi Koizumi

Daisuke Watanabe

Kyoichi Suguro

Akiko Saito

Shinji Yuasa

Koji Ando

Akio Fukushima

Hitoshi Kubota

Taro Nagahama

Choon Kun Ryu

Hyung Suk Lee

Jae Geun Oh

Keum Bum Lee

Kei Yakushiji

Sook Joo Kim

Yoshihiro Ueda

Gaku Minamihaba

Koji Yamakawa

Yukiteru Matsui

Kazuya Sawada

Katsuaki Natori

Shigeki Takahashi

Masako Kodera

Youngmin Eeh

Daisuke Ikeno

Tadaaki Oikawa

Motoyuki Sato

Kensuke Ota

Hiroki Tokuhira

Kenichi Yoshino

Yuichi Ito

Miki Mori

Masayoshi Iwayama

Hiroki Kawai

Marina Yamaguchi

Shigemi Mizukami

Shigeto Fukatsu

Satoshi Yanagi

Hideaki Harakawa

Terunobu Miyazaki

Yasuo Ando

Katsuyoshi Komatsu

Mikihiko Oogane

Hajime Eda

Min Suk Lee

Katsuhiko Koi

Ga Young Ha

Jieqiong Zhang

Satoshi Inada

Wu Feng

Masahiko Hasunuma

Ji Hwan Hwang

A magnetic memory includes first conductive lines, a second conductive line, a third conductive line, a fourth conductive line, a conductive layer, magnetoresistive elements, first transistors, a second transistor, and a third transistor. Each magnetoresistive element is arranged between the conductive layer and the second conductive line and includes a first magnetic layer, a second magnetic layer between the first magnetic layer and the second conductive line, and a first non-magnetic layer between the first magnetic layer and the second magnetic layer. Each first transistor is connected between the conductive layer and one of the magnetoresistive elements, and has a gate which is a part of one the first conductive lines. A second transistor is connected between a first end of the second conductive line and the third conductive line. A third transistor is connected between a second end of the second conductive line and the fourth conductive line.

Magnetic memory including transistors and magnetoresistive elements respectively connected between a conductive plate and a conductive line and additional transistors each connected between the conductive line and another conductive line

A magnetic memory device includes first to third conductors and a 3-terminal type memory cell coupled to the first to third conductors. The memory cell includes: a fourth conductor and a magnetoresistance effect element provided between the fourth and third conductors. The magnetoresistance effect element includes: a first ferromagnet in contact with the fourth conductor; a second ferromagnet provided in an opposite side of the fourth conductor with respect to the first ferromagnet; a dielectric between the first and second ferromagnets; a third ferromagnet provided in an opposite side of the first ferromagnet with respect to the second ferromagnet; and a nonmagnet provided between the second and third ferromagnets. A concentration of a noble metal contained in the first ferromagnet is higher than a concentration of the noble metal contained in the second ferromagnet.

Magnetic memory device

According to one embodiment, a magnetic memory device includes first to third conductor layers, and a three-terminal-type memory cell connected to the first to third conductor layers. The first memory cell includes a fourth conductor layer, a magnetoresistance effect element, a two-terminal-type first switching element, and a two-terminal-type second switching element. The fourth conductor layer includes a first portion connected to the first conductor layer, a second portion connected to the second conductor layer, and a third portion which is connected to the third conductor layer. The magnetoresistance effect element is connected between the third conductor layer and the fourth conductor layer. The first switching element is connected between the second conductor layer and the fourth conductor layer. The second switching element is connected between the first conductor layer and the third conductor layer.

According to one embodiment, a selector device includes a first electrode, a second electrode, and a selector layer disposed between the first electrode and the second electrode. At least one of the first electrode or the second electrode includes a stacked film. The stacked film includes a first layer including a first material with a first Debye temperature, and a second layer in contact with the first layer and including a second material with a second Debye temperature lower than the first Debye temperature. A ratio of the first Debye temperature to the second Debye temperature is equal to or greater than 5.

Selector device and semiconductor storage device

A semiconductor device according to an embodiment includes first to fifth interconnects, first to third memory cells, and a control circuit. The control circuit is configured to execute machine learning. Each of the first memory cells, the second memory cells, and the third memory cells includes a resistance changing element. In the machine learning, the control circuit is configured to: execute a write operation using a common write voltage to each of the second memory cells; and after the write operation, input input data to each of the first interconnects, and change a resistance value of at least one third memory cell of the third memory cells based on the input data and a signal output from each of the fifth interconnects based on the input data.

Semiconductor device

A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1C2A, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;z&#x3c;1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x&#x2264;(3&#x2212;(3+b)&#xd7;y&#x2212;z)/(3+a).

Resistance variable device with chalcogen-containing layer

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer, a second sub-magnetic layer, and a first intermediate layer between the first sub-magnetic layer and the second sub-magnetic layer, and the first sub-magnetic layer is provided between the nonmagnetic layer and the second sub-magnetic layer and has a magnetization direction antiparallel to a magnetization direction of the second sub-magnetic layer and has a magnetization amount smaller than that of the second sub-magnetic layer.

According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a first sub-magnetic layer in a polycrystalline state and a second sub-magnetic layer in an amorphous state.

According to one embodiment, a magnetic memory device includes a first interconnect and a magnetoresistive effect element. The first interconnect includes a first nonmagnet including a light metal and a second nonmagnet including a heavy metal on the first nonmagnet. The magnetoresistive effect element includes a third nonmagnet on the second nonmagnet, a first ferromagnet on the third nonmagnet, a second ferromagnet, and a fourth nonmagnet between the first ferromagnet and the second ferromagnet. The third nonmagnet has a film thickness of 2 nanometers or less.

Magnetic memory device with a nonmagnet between two ferromagnets of a magnetoresistive effect element

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

Magnetic memory device with sidewall layer containing boron and manufacturing method thereof

According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment.

Magnetic memory device and method of manufacturing the same

According to one embodiment, a magnetic memory device includes a stacked structure, the stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the nonmagnetic layer comprises a structure in which a first oxide layer formed of a first metal oxide and a second oxide layer formed of a second metal oxide having a relative dielectric constant greater than a relative dielectric constant of the first metal oxide are stacked.

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, wherein as viewed in a direction parallel to a stacked direction of the stacked structure, a pattern of a lower surface of the first magnetic layer is located inside a pattern of an upper surface of the first magnetic layer, and a pattern of an upper surface of the second magnetic layer is located inside a pattern of a lower surface of the second magnetic layer or substantially conforms to the pattern of the lower surface of the second magnetic layer.

According to an embodiment, a magnetic storage device includes a memory cell including a magnetoresistive element, a selector, a first end, and a second end. The magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer disposed between the second ferromagnetic layer and the third ferromagnetic layer to couple the second ferromagnetic layer with the third ferromagnetic layer in an antiferromagnetic manner. The first ferromagnetic layer has a film thickness larger than a film thickness of the second ferromagnetic layer.

Magnetic storage device

A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.

Magnetoresistive element and method of manufacturing the same

Growing community of inventors

Yokohama, Japan

Masatoshi Yoshikawa