The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2016

Filed:

Aug. 29, 2013
Applicants:

Masahiko Nakayama, Shimonoseki, JP;

Toshihiko Nagase, Tokyo, JP;

Tadashi Kai, Tokyo, JP;

Youngmin Eeh, Kawagoe, JP;

Koji Ueda, Fukuoka, JP;

Yutaka Hashimoto, Kimitsu, JP;

Daisuke Watanabe, Kai, JP;

Kazuya Sawada, Morioka, JP;

Inventors:

Masahiko Nakayama, Shimonoseki, JP;

Toshihiko Nagase, Tokyo, JP;

Tadashi Kai, Tokyo, JP;

Youngmin Eeh, Kawagoe, JP;

Koji Ueda, Fukuoka, JP;

Yutaka Hashimoto, Kimitsu, JP;

Daisuke Watanabe, Kai, JP;

Kazuya Sawada, Morioka, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/08 (2006.01); H01F 10/32 (2006.01); H01F 41/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01F 10/3254 (2013.01); H01F 10/3259 (2013.01); H01F 41/325 (2013.01);
Abstract

According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.


Find Patent Forward Citations

Nakayama, Masahiko. (2016). Magnetoresistance effect element with shift canceling layer having pattern area greater than that of storage layer (U.S. Patent No. 9269890). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9269890

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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