The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2019

Filed:

Sep. 09, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Masatoshi Yoshikawa, Seoul, KR;

Hisanori Aikawa, Seoul, KR;

Kazuhiro Tomioka, Seoul, KR;

Shuichi Tsubata, Seoul, KR;

Masaru Toko, Seoul, KR;

Katsuya Nishiyama, Yokohama Kanagawa, JP;

Yutaka Hashimoto, Seoul, KR;

Tatsuya Kishi, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 27/228 (2013.01);
Abstract

A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.


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