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For the Inventor, By the Inventor

Yokohama, Japan

Katsuya Nishiyama

This inventor holds 58 USPTO granted patents and 2 published patent applications, primarily in Magnetoresistive Memory (CPC class H01L). Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation, Kioxia Corporation. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuya Nishiyama. Retrieved from https://idiyas.com/inventor/katsuya-nishiyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 58 

% Patents Active = 84.5

Average Co-Inventor Count = 5.1

ph-index = 11

Forward Citations = 480(Granted Patents)

Forward Citations (Not Self Cited) = 437(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa-ken, JP (2004 - 2009)
  • Kanagawa, JP (2015)
  • Yokohama, JP (2004 - 2016)
  • Seoul, KR (2017)
  • Yokohama Kanagawa, JP (2016 - 2024)

Company Filing History:

goldMedal50 out of 53,276 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal4 out of 2,955 
 
Toshiba Memory Corporation
 patents
bronzeMedal3 out of 3,204 
 
Kioxia Corporation
 patents
4. 2 out of 1,766 
 
National Institute of Advanced Industrial Science and Technology
 patents
5. 1 out of 1,052 
 
Tohoku University
 patents
6. 1 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2004-2026

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Areas of Expertise:
Magnetoresistive Element
Magnetic Memory
Semiconductor Memory
Magnetoresistive Effect
Memory Device
Magnetic Storage
Manufacturing Method
Screening Method
Data Writing
Magnetoresistive Device
Magnetic Random Access Memory
Storage Device
58 patents (USPTO):Explore Patents
1. 12646574 - Semiconductor memory device (2026-06-02),
2. 11978501 - Semiconductor memory device and method (2024-05-07),
3. 11423997 - Semiconductor memory device (2022-08-23),
4. 10305025 - Magnetic memory device (2019-05-28),
5. 10236077 - Screening method for magnetic storage device, screening apparatus for magnetic storage device, and manufacturing method of magnetic storage device (2019-03-19),
6. 10230042 - Magnetoresistive element and method of manufacturing the same (2019-03-12),
7. 9882119 - Magnetic memory device (2018-01-30),
8. 9653138 - Magnetic memory and method of writing data (2017-05-16),
9. 9590174 - Magnetoresistive memory device and manufacturing method of the same (2017-03-07),
10. 9385307 - Magnetoresistive element and method of manufacturing the same (2016-07-05),
11. 9373776 - Magnetoresistive element and magnetic memory using the same (2016-06-21),
12. 9312477 - Semiconductor storage device with magnetoresistive element (2016-04-12),
13. 9312475 - Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element (2016-04-12),
14. 9196823 - Magnetoresistive effect element (2015-11-24),
15. 9178137 - Magnetoresistive element and magnetic memory (2015-11-03),

Title: Celebrating the Innovations of Katsuya Nishiyama

Introduction: Katsuya Nishiyama is an esteemed inventor based in Yokohama, Japan, known for his groundbreaking contributions in the field of semiconductor technology. With an impressive portfolio of 57 patents, his work has significantly advanced the capabilities of memory devices in modern electronics.

Latest Patents: Nishiyama's recent patents illustrate his dedication to enhancing semiconductor memory technology. One notable patent describes a semiconductor memory device and method that optimizes threshold voltages across multiple memory cells, resulting in improved data storage efficiency. Another invention presents a semiconductor memory device featuring multiple memory strings and program operations that fine-tune bit line voltages, allowing for enhanced performance during programming cycles. These innovations showcase his ability to address complex challenges in memory functionality and efficiency.

Career Highlights: Katsuya Nishiyama has made substantial contributions during his tenure at prominent companies, including Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His expertise in semiconductor memory systems has informed pivotal developments within these organizations, furthering their commitment to innovation in the tech space.

Collaborations: Throughout his career, Nishiyama has collaborated with notable colleagues such as Toshihiko Nagase and Tadashi Kai. These partnerships have facilitated a robust exchange of ideas, propelling advancements in semiconductor technology and reinforcing the collaborative spirit inherent in research and development.

Conclusion: Katsuya Nishiyama exemplifies the innovative spirit that drives progress in technology. His expansive portfolio of patents not only highlights his individual ingenuity but also reflects the dynamic interplay of collaboration within the semiconductor industry. As technology continues to evolve, Nishiyama’s contributions will undoubtedly resonate in future advancements, paving the way for a more efficient and capable electronic landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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