Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

National Institute of Advanced Industrial Science and Technology

Other

Tohoku University

Katsuya Nishiyama

Toshihiko Nagase

Tadashi Kai

Hiroaki Yoda

Eiji Kitagawa

Koji Ueda

Makoto Nagamine

Tatsuya Kishi

Yoshiaki Saito

Tadaomi Daibou

Masatoshi Yoshikawa

Minoru Amano

Shigeki Takahashi

Daisuke Watanabe

Yutaka Hashimoto

Tomomasa Ueda

Yoshihisa Iwata

Yoshiaki Asao

Masahiko Nakayama

Koji Yamakawa

Shinji Yuasa

Daisuke Ikeno

Koji Ando

Akio Fukushima

Hitoshi Kubota

Taro Nagahama

Katsuaki Natori

Hisanori Aikawa

Kuniaki Sugiura

Jyunichi Ozeki

Masaru Tokou

Noboru Shibata

Kikuko Sugimae

Naoharu Shimomura

Sumio Ikegawa

Masaru Toko

Akiyuki Murayama

Kay Yakushiji

Hiroyuki Ohtori

Kei Yakushiji

Motohiko Fujimatsu

Kazuhiro Tomioka

Youngmin Eeh

Yusuke Arayashiki

Kenji Noma

Shuichi Tsubata

Shigemi Mizukami

Shigeto Fukatsu

Terunobu Miyazaki

Yasuo Ando

Mikihiko Oogane

Yosuke Kobayashi

Kyosuke Sano

Daisuki Watanbe

Wu Feng

According to an embodiment, a circuit in a semiconductor memory device sets threshold voltages of a plurality of memory cells such that two first distributions are formed in a first section on a lowest voltage side in 2sections. After that, the circuit sets threshold voltages of the plurality of memory cells such that 2second distributions are separately formed two by two. The circuit then sets 2third distributions for the 2sections.

Semiconductor memory device and method

A semiconductor memory device includes first and second memory string including first and second memory cell, respectively, and first and second bit line connected to first and second memory string, respectively. In a first program operation, a first bit line voltage is supplied to the first and the second bit line. In a second program operation, a second bit line voltage larger than the first bit line voltage or a third bit line voltage larger than the second bit line voltage is supplied to the first and the second bit line. In a third program operation, the second and the third bit line voltage is supplied to the first and the second bit line, respectively. In a fourth program operation, the third and the second bit line voltage is supplied to the first and the second bit line, respectively.

Semiconductor memory device

A magnetic memory device including a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction; a second magnetic layer having a fixed magnetization direction which is perpendicular to a main surface thereof and which corresponds to the first magnetization direction, and having a top surface including a recess portion or a bottom surface including a recess portion; a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a fixed magnetization direction which is perpendicular to a main surface thereof and which corresponds to the second magnetization direction; and a nonmagnetic layer provided between the first magnetic layer and the third magnetic layer.

Magnetic memory device

According to one embodiment, a screening method includes performing a first screening operation on a memory device at a first temperature to detect a defect in magnetoresistive effect elements of the memory device, replacing a first magnetoresistive effect element that is determined as defective in the first screening operation by substituting a second magnetoresistive effect element disposed in a redundancy area of the memory device for the first magnetoresistive, and performing a second screening operation on the memory device at a second temperature higher than the first temperature if the first screening operation detects a defect. Each of the first screening operation and the second screening operation includes writing data into the magnetoresistive effect element, reading data from the magnetoresistive effect element after the writing, and determining a magnetoresistive effect element is defective when the data as written does not match the data as read.

Screening method for magnetic storage device, screening apparatus for magnetic storage device, and manufacturing method of magnetic storage device

A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.

Magnetoresistive element and method of manufacturing the same

According to one embodiment, a magnetic memory device includes a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction, a second magnetic layer having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the first magnetization direction, a third magnetic layer provided between the first and second magnetic layers, having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the second magnetization direction, and having a side surface including a recess portion, and a nonmagnetic layer provided between the first and third magnetic layers.

A memory includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a third magnetic layer synthetic-antiferromagnetic-coupled with the second magnetic layer, and a controller controlling a read operation and a write operation. The write operation includes a first operation, a second operation and a third operation. A first potential of the first magnetic layer is larger than a second potential of the third magnetic layer in the first operation. A third potential of the third magnetic layer is larger than a fourth potential of the first magnetic layer in the second operation. A fifth potential of the first magnetic layer is larger than a sixth potential of the third magnetic layer in the third operation.

Magnetic memory and method of writing data

According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

Magnetoresistive memory device and manufacturing method of the same

According to one embodiment, a magnetoresistive element includes a first magnetic layer having a perpendicular and invariable magnetization, a first nonmagnetic insulating layer on the first magnetic layer, a second magnetic layer on the first nonmagnetic insulating layer, the second magnetic layer having a perpendicular and variable magnetization, a second nonmagnetic insulating layer on the second magnetic layer, and a nonmagnetic conductive layer on the second nonmagnetic insulating layer. The second nonmagnetic insulating layer includes a first metal oxide with a predetermined element. The first nonmagnetic insulating layer includes a second metal oxide.

According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.

Magnetoresistive element and magnetic memory using the same

According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.

Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element

According to one embodiment, a semiconductor storage device is disclosed. The device includes first magnetic layer, second magnetic layer, first nonmagnetic layer between them. The first magnetic layer includes a structure in which first magnetic material film, second magnetic material film, and nonmagnetic material film between the first and second magnetic material films are stacked. The first magnetic material film is nearest to the first nonmagnetic layer in the first magnetic layer. The nonmagnetic material film includes at least one of Ta, Zr, Nb, Mo, Ru, Ti, V, Cr, W, Hf. The second magnetic material film includes stacked materials, including first magnetic material nearest to the first nonmagnetic layer among the stacked materials, and second magnetic material which is same magnetic material as the first magnetic material and has smaller thickness than the first magnetic material.

Semiconductor storage device with magnetoresistive element

A magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

Magnetoresistive effect element

A magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.

Magnetoresistive element and magnetic memory

A magnetoresistive element includes a first magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation; a second magnetic layer having an axis of magnetization perpendicular to the film surface and a changeable magnetization orientation; a first nonmagnetic layer arranged between the first and second magnetic layers; and a third magnetic layer having an axis of magnetization perpendicular to the film surface and a fixed magnetization orientation opposite that of the first magnetic layer. The first magnetic layer has a first magnetic material film in contact with the first nonmagnetic layer, a nonmagnetic material film in contact with the first magnetic material film, and a second magnetic material film containing Co-xWx (0&#x3c;x&#x3c;40 at %) and in contact with the nonmagnetic material film. As current flows via the nonmagnetic layer, the magnetization orientation of the second magnetic layer changes.

Growing community of inventors

Yokohama, Japan

Katsuya Nishiyama