The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Sep. 04, 2017
Toshiba Memory Corporation, Tokyo, JP;
Yosuke Kobayashi, Yokohama Kanagawa, JP;
Katsuya Nishiyama, Yokohama Kanagawa, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
According to one embodiment, a screening method includes performing a first screening operation on a memory device at a first temperature to detect a defect in magnetoresistive effect elements of the memory device, replacing a first magnetoresistive effect element that is determined as defective in the first screening operation by substituting a second magnetoresistive effect element disposed in a redundancy area of the memory device for the first magnetoresistive, and performing a second screening operation on the memory device at a second temperature higher than the first temperature if the first screening operation detects a defect. Each of the first screening operation and the second screening operation includes writing data into the magnetoresistive effect element, reading data from the magnetoresistive effect element after the writing, and determining a magnetoresistive effect element is defective when the data as written does not match the data as read.