The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Jun. 16, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Akiyuki Murayama, Tokyo, JP;

Kikuko Sugimae, Yokohama Kanagawa, JP;

Katsuya Nishiyama, Yokohama Kanagawa, JP;

Yusuke Arayashiki, Kawasaki Kanagawa, JP;

Motohiko Fujimatsu, Shinagawa Tokyo, JP;

Kyosuke Sano, Kamakura Kanagawa, JP;

Noboru Shibata, Kawasaki Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 5/06 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G11C 11/4099 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 5/063 (2013.01); G11C 11/4074 (2013.01); G11C 11/4099 (2013.01);
Abstract

According to an embodiment, a circuit in a semiconductor memory device sets threshold voltages of a plurality of memory cells such that two first distributions are formed in a first section on a lowest voltage side in 2sections. After that, the circuit sets threshold voltages of the plurality of memory cells such that 2second distributions are separately formed two by two. The circuit then sets 2third distributions for the 2sections.


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