San Diego, CA, United States of America

Xia Li

This inventor holds 248 USPTO granted patents and 92 published patent applications, plus 2 CIPO patents and 40 EPO patents, primarily in Display Technologies (CPC class H01L43-08). Top assignees: Qualcomm Incorporated, Apple Inc., Other. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xia Li. Retrieved from https://idiyas.com/inventor/xia-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 248 

% Patents Active = 69.4

 

 

Average Co-Inventor Count = 2.9

ph-index = 17

Forward Citations = 1,273(Granted Patents)

Forward Citations (Not Self Cited) = 1,135(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • San Diego, CA (US) (2009 - 2024)
  • San Jose, CA (US) (2020 - 2024)

Company Filing History:

goldMedal232 out of 45,002 
 
Qualcomm Incorporated
 patents
silverMedal12 out of 43,632 
 
Apple Inc.
 patents
bronzeMedal3 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2009-2026

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Areas of Expertise:
Quantum Dots
Micro LED Display
Field Effect Transistor
Capacitance Density
Optical Integrated Device
3D Interconnect Structures
Embedded Electrical Devices
Dynamic Aging Monitor
Charge-Sharing System
Memory Cell
Nanosheet Integration
Heterojunction Bipolar Transistor
248 patents (USPTO):Explore Patents

Title: Xia Li: A San Diego Innovator and Patent Holder Extraordinaire

Introduction:

In the realm of innovations and patents, there are a select few individuals who stand out for their groundbreaking contributions and sheer volume of patents. Xia Li, hailing from San Diego, CA, is one such innovator. With an extensive portfolio of 213 patents to his name, Li has made significant strides in semiconductor technology, particularly in the areas of static random access memory (SRAM) and three-dimensional (3D) double-gate semiconductors. Let us delve into Li's remarkable accomplishments and explore his career highlights and collaborations.

Latest Patents:

Among Xia Li's impressive array of patents, two recent advancements have truly caught the attention of the industry. The "Fin field-effect transistor (FinFET) static random access memory (SRAM) having pass-gate transistors with offset gate contact regions" patent introduces an SRAM cell design that incorporates pass-gate (PG) transistors with offset gate contact regions. This innovation improves the read margin and overall performance of the SRAM cell. Li's expertise in SRAM technology shines through this patent.

Li's second recent patent, which showcases his proficiency in the field of semiconductor devices, centers around the "Three-dimensional (3D) double-gate semiconductor." This patent discloses the design and fabrication methods for a double-gate metal oxide semiconductor (MOS) transistor. With a unique configuration involving back gates, dielectric layers, MX2 material layers, and work function metals, Li's invention presents new capabilities for efficient and advanced semiconductors.

Career Highlights:

Xia Li has left an indelible mark on the industry, with a career spanning multiple prestigious companies. Notably, Li has worked at Qualcomm Incorporated, a global leader in wireless technology development. There, he had the opportunity to contribute to cutting-edge innovations in semiconductor devices, wireless technologies, and communication systems.

In addition to Qualcomm, Li has collaborated with other prominent industry players, though specific details about these collaborations are not provided. It is worth mentioning his association with colleagues Seung Hyuk Kang and Bin Yang, as they have likely made significant contributions to the remarkable advancements in the field.

Conclusion:

Xia Li's extensive patent portfolio and his advancements in the realms of SRAM and semiconductor technologies make him a true luminary in the field of innovations and patents. His expertise, particularly in the design of SRAM cells and 3D double-gate semiconductors, has undoubtedly influenced the semiconductor industry's progress. Collaborating with well-known companies and working alongside distinguished professionals has further propelled his accomplishments. As the world of technology continues to evolve, one can be assured that Xia Li will remain at the forefront of pioneering innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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