The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Sep. 21, 2021
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventor:

Xia Li, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/66 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76846 (2013.01); H01L 21/76871 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/66 (2013.01); H10D 1/042 (2025.01); H10D 1/043 (2025.01); H10D 1/716 (2025.01); H01L 2223/6616 (2013.01); H01L 2223/6672 (2013.01);
Abstract

A three-dimensional (3D) metal-insulator-metal capacitor (MIMCAP) includes a plurality of center studs disposed within cavity walls of a plurality of cavities in a top plate. The center studs and the cavity walls are oriented orthogonal to a first metal layer and extend through a first via layer and a second metal layer. Each center stud includes a metal layer stud in the second metal layer stacked on a via layer stud in the first via layer. A dielectric layer is disposed between the center studs and the cavity walls of the plurality of cavities in the top plate. The center studs are coupled to a first electrode, and the top plate is coupled to a second electrode in the interconnect layers. In some examples, the center studs can form vertically oriented cylindrical capacitive elements positioned for high capacitance density.


Find Patent Forward Citations

Li, Xia. (2026). Three-dimensional (3d) metal-insulator-metal capacitor (mimcap) including stacked vertical metal studs for increased capacitance density and related fabrication methods (U.S. Patent No. 12581943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581943

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…