Yokohama, Japan

Tatsuya Kishi


Average Co-Inventor Count = 4.8

ph-index = 21

Forward Citations = 1,685(Granted Patents)

Forward Citations (Not Self Cited) = 1,586(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tokyo, JP (2004 - 2006)
  • Kanagawa-ken, JP (2000 - 2010)
  • Kanagawa, JP (2015)
  • Yokohama, JP (2003 - 2016)
  • Seoul, KR (2016)
  • Yokohama Kanagawa, JP (2020)
  • Seongnam-si Gyeonggi-do, KR (2019 - 2021)
  • Seongnam-si, KR (2016 - 2023)

Company Filing History:


Years Active: 2000-2023

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Areas of Expertise:
Magnetic Memory Device
Magnetoresistive Memory
Magnetoresistive Element
Semiconductor Memory
Resistance Change Memory
Spin Transistor
Magnetoresistive Effect
Magnetic Storage Device
Magnetic Random Access Memory
Testing Method
Manufacturing Method
Authentication Device
121 patents (USPTO):Explore Patents

Title: Tatsuya Kishi: Innovator in Magnetic Memory Device Technology

Introduction:

Tatsuya Kishi, a talented inventor hailing from Yokohama, Japan, has made significant contributions to the field of magnetic memory devices. With an impressive portfolio of 121 patents, his expertise lies in developing cutting-edge memory technologies. This article will explore Kishi's latest patents, career highlights, notable collaborations, and his overall impact on the industry.

Latest Patents:

Kishi's recent work has focused on magnetic memory devices. His patents showcase his ability to innovate and push the boundaries of this technology. Two notable patents are as follows:

1. Magnetic Memory Device: This patent describes a magnetic memory device consisting of a first memory cell and a second memory cell. Each memory cell comprises a stacked structure consisting of magnetic layers and non-magnetic layers. Notably, the concentration of iron (Fe) in the first magnetic layer differs between the first and second stacked structures, allowing for improved performance and versatility.

2. Magnetic Memory Device with Varying Layer Thickness: A key feature of this invention is the inclusion of a predetermined layer in the stacked structures of the first and second memory cells. The predetermined layers have different thicknesses in each structure. This design choice enhances the device's overall memory capabilities and opens avenues for further technological advancements.

Career Highlights:

Kishi's impressive career spans work in renowned companies such as Toshiba Memory Corporation and its parent company, Kabushiki Kaisha Toshiba (Toshiba Corporation). Through his tenure, he has contributed significantly to their research and development efforts, elevating the magnetic memory technology sector.

Collaborations:

During his career, Kishi has had the opportunity to work alongside notable colleagues, including Hiroaki Yoda and Yoshiaki Saito. Collaborations with colleagues are invaluable in the innovation process, as they foster an environment for knowledge exchange and cross-pollination of ideas. Kishi's collaborative relationships have undoubtedly enriched his work and the field as a whole.

Conclusion:

Tatsuya Kishi's dedication and expertise in magnetic memory device technology have positioned him as a prominent figure in the field. With an impressive portfolio of 121 patents and a track record of collaborating with talented individuals, Kishi has made significant contributions to the industry. His latest patents demonstrate his commitment to pushing the boundaries of magnetic memory technology, paving the way for future innovations in this field.

As we look to the future, it is without a doubt that Tatsuya Kishi's continued contributions will shape the landscape of magnetic memory devices, benefiting a wide range of industries and revolutionizing data storage and processing capabilities.

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