The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2019

Filed:

Sep. 12, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Keiji Hosotani, Yokkaichi Mie, JP;

Tatsuya Kishi, Seongnam-si Gyeonggi-do, KR;

Akira Katayama, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G11C 11/1673 (2013.01);
Abstract

According to one embodiment, a memory includes a first MTJ element having a first area along a first plane; and second MTJ elements each having a second area along the first plane. The second area is larger than or equal to twice the first area and smaller than or equal to five times the first area. Each of the second MTJ elements includes a first ferromagnet, a second ferromagnet, and a first nonmagnet. Respective magnetizations of respective first ferromagnets of the second MTJ elements are oriented along a first direction. Respective magnetizations of respective second ferromagnets of the second MTJ elements are oriented along a second direction. One of the second MTJ elements is coupled to another one of the second MTJ elements in series or in parallel.


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