The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Sep. 12, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Masaru Toko, Seoul, KR;
Keiji Hosotani, Yokkaichi Mie, JP;
Hisanori Aikawa, Seoul, KR;
Tatsuya Kishi, Seongnam-si, KR;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, a first non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first magnetic layer and having a fixed magnetization direction and provided on the first magnetic layer. The second magnetic layer includes a non-magnetic metal including at least one of Mo (molybdenum), Ta (tantalum), W (tungsten), Hf (hafnium), Nb (niobium) and Ti (titanium).