The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Sep. 12, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Tatsuya Kishi, Seongnam-si, KR;

Youngmin Eeh, Seongnam-si, KR;

Kazuya Sawada, Seoul, KR;

Masaru Toko, Kodaira, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01F 10/329 (2013.01); H01F 10/3259 (2013.01); H01F 10/3286 (2013.01); H01L 27/228 (2013.01); H01L 43/10 (2013.01);
Abstract

According to one embodiment, a magnetic memory device includes a stacked structure that includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the entire first magnetic layer exhibits a parallel or antiparallel magnetization direction to the second magnetic layer, and has an anisotropic magnetic field Hk_film within a range from −1 kOe to +1 kOe.


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