The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Sep. 12, 2017
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Tsuneo Inaba, Kamakura Kanagawa, JP;
Tatsuya Kishi, Seongnam-si, KR;
Masahiko Nakayama, Kawasaki Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor memory device includes the following configuration. A resistance change element has first, second and third magnetic layers and a non-magnetic layer disposed between the first and second magnetic layers, and a metal layer disposed between the second and third magnetic layers. An SAF structure is comprised of the second magnetic layer, the metal layer and the third magnetic layer. A write circuit applies a first voltage and a second voltage having reversed polarity of the first voltage to the resistance change element in a write operation in which the resistance change element is changed from a low-resistance state to a high-resistance state.