The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Mar. 10, 2017
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Tatsuya Kishi, Seongnam-si, KR;
Tsuneo Inaba, Kamakura Kanagawa, JP;
Daisuke Watanabe, Seoul, KR;
Masahiko Nakayama, Kawasaki Kanagawa, JP;
Nobuyuki Ogata, Odawara Kanagawa, JP;
Masaru Toko, Seoul, KR;
Hisanori Aikawa, Seoul, KR;
Jyunichi Ozeki, Seoul, KR;
Toshihiko Nagase, Seoul, KR;
Young Min Eeh, Seongnam-si, KR;
Kazuya Sawada, Seoul, KR;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.