The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11094743 B1

Date of Patent:

Aug. 17, 2021

Filed:

Mar. 14, 2019

Magnetic memory device

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Masayoshi Iwayama, Seoul, KR;

Tatsuya Kishi, Seongnam-si Gyeonggi-do, KR;

Masahiko Nakayama, Kawasaki Kanagawa, JP;

Toshihiko Nagase, Shibuya Tokyo, JP;

Daisuke Watanabe, Yokkaichi Mie, JP;

Tadashi Kai, Setagaya Tokyo, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Holtz, Holtz & Volek PC

Primary Examiner:

Tan N Tran

Int. Cl.

CPC ...

H01L 29/82 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01);

U.S. Cl.

CPC ...

H01L 27/224 (2013.01); H01L 43/12 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);

Abstract

According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.

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