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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10153423 B1

PDFFull Text
Date of Patent:
Dec. 11, 2018

Filed:

Dec. 15, 2017

Electronic device

Applicants:

SK Hynix Inc., Gyeonggi-do, KR;

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Yang-Kon Kim, Gyeonggi-do, KR;

Guk-Cheon Kim, Gyeonggi-do, KR;

Jae-Hyoung Lee, Gyeonggi-do, KR;

Jong-Koo Lim, Gyeonggi-do, KR;

Ku-Youl Jung, Gyeonggi-do, KR;

Toshihiko Nagase, Tokyo, JP;

Youngmin Eeh, Gyeonggi-do, KR;

Assignees:

SK Hynix Inc., Gyeonggi-do, KR;

Toshiba Memory Corporation, Tokyo, JP;

Attorney:

IP & T Group LLP

Primary Examiner:

Harry W Byrne

Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G06F 3/06 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 11/161 (2013.01); G11C 11/165 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01F 10/329 (2013.01); H01F 10/3213 (2013.01); H01F 10/3286 (2013.01);
Abstract

An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride.

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