Icheon, South Korea

Guk-Cheon Kim

This inventor holds 27 USPTO granted patents and 6 published patent applications, primarily in Electronic Device Fabrication. Top assignees: Skhynix Inc., Toshiba Memory Corporation, Kabushiki Kaisha Toshiba. Active years: 2016-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guk-Cheon Kim. Retrieved from https://idiyas.com/inventor/guk-cheon-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 100.0

Average Co-Inventor Count = 5.6

ph-index = 3

Forward Citations = 90(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2016 - 2020)
  • Icheon-Si, KR (2016 - 2021)
  • Yeoju-si, KR (2017 - 2021)

Company Filing History:


Years Active: 2016-2021

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Areas of Expertise:
Electronic Device
Fabrication Method
Semiconductor Memory
Variable Resistance Element
Magnetic Tunnel Junction
Interface Enhancement Layer
Free Layers
Characteristic Improvement
27 patents (USPTO):Explore Patents

Title: Innovations of Guk-Cheon Kim in Electronic Device Fabrication

Introduction

Guk-Cheon Kim, based in Icheon-si, South Korea, is a notable inventor known for his significant contributions in the field of electronic devices. With a remarkable portfolio of 27 patents, his innovations focus primarily on methods and technologies that enhance the functionality of electronic devices.

Latest Patents

Among his latest patents, Guk-Cheon Kim has developed an electronic device and method for fabricating the same. This technology outlines a method for creating an electronic device equipped with a variable resistance element, which features a free layer with a variable magnetization direction, and a pinned layer with a non-variable magnetization direction. Additional components include first ferromagnetic materials, a tunnel barrier layer, and a magnetic correction layer that facilitates anti-parallel magnetization. Another significant invention is a method for fabricating an electronic device that incorporates semiconductor memory, which involves forming a buffer layer to support crystal growth and creating a Magnetic Tunnel Junction (MTJ) structure.

Career Highlights

Guk-Cheon Kim has cultivated his expertise at prominent companies such as SK Hynix Inc. and Toshiba Memory Corporation. His experiences in these leading organizations have equipped him with the knowledge and skills necessary to innovate in electronic device fabrication.

Collaborations

Throughout his career, Guk-Cheon Kim has collaborated with talented individuals, including coworkers Yang-Kon Kim and Won-Joon Choi. These partnerships have likely contributed to the advancement of his research and the success of his patents.

Conclusion

Guk-Cheon Kim stands out as a pioneer in the electronics industry, with a rich history of inventive contributions. His patents reflect a deep understanding of electronic device fabrication, solidifying his status as an influential inventor dedicated to pushing the boundaries of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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