The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Mar. 24, 2017
SK Hynix Inc., Icheon-Si, KR;
Guk-Cheon Kim, Icheon-si, KR;
Ki-Seon Park, Icheon-si, KR;
Bo-Mi Lee, Icheon-si, KR;
Won-Joon Choi, Icheon-si, KR;
Yang-Kon Kim, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
Disclosed are an electronic device comprising a semiconductor memory. The semiconductor memory includes a variable resistance element including a free layer having a variable magnetization direction; a pinned layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the free layer includes: a first free layer adjacent to the tunnel barrier layer and having a perpendicular magnetic anisotropy at an interface with the tunnel barrier layer; and a second free layer spaced apart from the tunnel barrier layer by the first free layer and having a saturation magnetization lower than a saturation magnetization of the first free layer.