The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
Jan. 22, 2018
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Jong-Koo Lim, Icheon-si, KR;
Yang-Kon Kim, Icheon-si, KR;
Ku-Youl Jung, Icheon-si, KR;
Guk-Cheon Kim, Yeoju-si, KR;
Jeong-Myeong Kim, Hwaseong-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer including a CoFeBAl alloy and having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the CoFeBAl alloy may have an Al content less than 10 at %.