The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Jan. 08, 2018
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Yang-Kon Kim, Icheon-si, KR;

Bo-Mi Lee, Icheon-si, KR;

Won-Joon Choi, Icheon-si, KR;

Guk-Cheon Kim, Icheon-si, KR;

Jong-Koo Lim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 43/08 (2013.01); H01L 45/1253 (2013.01);
Abstract

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an under layer including first and second metal layers and a barrier layer having a dual phase structure of different crystal structures and interposed between the first and second metal layers; a first magnetic layer positioned over the under layer and having a variable magnetization direction; a tunnel barrier layer positioned over the first magnetic layer; and a second magnetic layer positioned over the tunnel barrier layer and having a pinned magnetization direction, and the under layer may further include a barrier layer having a dual phase structure between the first and second metal layers.


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