The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2018

Filed:

Jul. 17, 2017
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Yang-Kon Kim, Icheon-si, KR;

Guk-Cheon Kim, Icheon-si, KR;

Jeong-Myeong Kim, Icheon-Si, KR;

Jong-Koo Lim, Icheon-Si, KR;

Ku-Youl Jung, Icheon-Si, KR;

Won-Joon Choi, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1697 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include: an under layer including a plurality of material layers having a different crystal structures; a first magnetic layer formed over the under layer and having a variable magnetization direction; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer and having a pinned magnetization direction.


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