The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Mar. 25, 2016
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Guk-Cheon Kim, Icheon-si, KR;

Yang-Kon Kim, Icheon-Si, KR;

Seung Mo Noh, Icheon-Si, KR;

Won-Joon Choi, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 13/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); G06F 13/42 (2006.01); G11C 11/15 (2006.01); H01L 27/22 (2006.01); G06F 12/0802 (2016.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G06F 13/1673 (2013.01); G06F 12/0802 (2013.01); G06F 13/4282 (2013.01); G11C 11/15 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer.


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