The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Dec. 14, 2017
SK Hynix Inc., Gyeonggi-do, KR;
Toshiba Memory Corporation, Tokyo, JP;
Ku-Youl Jung, Gyeonggi-do, KR;
Guk-Cheon Kim, Gyeonggi-do, KR;
Toshihiko Nagase, Tokyo, JP;
Daisuke Watanabe, Tokyo, JP;
Won-Joon Choi, Seoul, KR;
Youngmin Eeh, Gyeonggi-do, KR;
Kazuya Sawada, Tokyo, JP;
SK Hynix Inc., Gyeonggi-do, KR;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer between the free layer and the pinned layer, wherein the free layer may include a first magnetic layer; a second magnetic layer having a smaller perpendicular magnetic anisotropy energy density than the first magnetic layer; and a spacer interposed between the first magnetic layer and the second magnetic layer.