The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Jan. 08, 2018
SK Hynix Inc., Icheon-si, KR;
Won-Joon Choi, Icheon-si, KR;
Ki-Seon Park, Icheon-si, KR;
Cha-Deok Dong, Icheon-si, KR;
Bo-Mi Lee, Icheon-si, KR;
Guk-Cheon Kim, Icheon-si, KR;
Seung-Mo Noh, Icheon-si, KR;
Min-Suk Lee, Icheon-si, KR;
Chan-Sik Park, Icheon-si, KR;
Jae-Heon Kim, Icheon-si, KR;
Choi-Dong Kim, Icheon-si, KR;
Jae-Hong Kim, Icheon-si, KR;
Yang-Kon Kim, Icheon-si, KR;
Jong-Koo Lim, Icheon-si, KR;
Jeong-Myeong Kim, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.