The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Sep. 25, 2020
Applicants:

SK Hynix Inc., Gyeonggi-do, KR;

Kioxia Corporation, Tokyo, JP;

Inventors:

Tae Young Lee, Gyeonggi-do, KR;

Guk Cheon Kim, Gyeonggi-do, KR;

Soo Gil Kim, Gyeonggi-do, KR;

Soo Man Seo, Gyeonggi-do, KR;

Jong Koo Lim, Gyeonggi-do, KR;

Taiga Isoda, Tokyo, JP;

Assignees:

SK hynix Inc., Gyeonggi-do, KR;

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H10N 50/85 (2023.02);
Abstract

An electronic device may include a semiconductor memory, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe—O bond.


Find Patent Forward Citations

Loading…