Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Other

Skhynix Inc.

Kioxia Corporation

National Institute of Advanced Industrial Science and Technology

Tohoku University

Toshihiko Nagase

Daisuke Watanabe

Tadashi Kai

Hiroaki Yoda

Koji Ueda

Kazuya Sawada

Eiji Kitagawa

Katsuya Nishiyama

Makoto Nagamine

Youngmin Eeh

Tatsuya Kishi

Masatoshi Yoshikawa

Masahiko Nakayama

Tadaomi Daibou

Katsutaro Ichihara

Akira Kikitsu

Tadaaki Oikawa

Kenichi Yoshino

Tomoyuki Maeda

Junichi Akiyama

Sumio Ikegawa

Yoshiaki Fukuzumi

Hisanori Aikawa

Yutaka Hashimoto

Young Min Eeh

Shinji Yuasa

Guk-Cheon Kim

Yang-Kon Kim

Ku-Youl Jung

Koji Ando

Akio Fukushima

Hitoshi Kubota

Taro Nagahama

Hiroyuki Ohtori

Naomasa Nakamura

Hideyuki Nishizawa

Akiko Hirao

Keiichiro Yusu

Sumio Ashida

Won-Joon Choi

Jong-Koo Lim

Kenji Noma

Masaru Toko

Kay Yakushiji

Masaru Tokou

Yoshiaki Asao

Tsuneo Inaba

Minoru Amano

Naoharu Shimomura

Kenji Todori

Yasuyuki Sonoda

Masayoshi Iwayama

Jyunichi Ozeki

Won Joon Choi

Hiroki Kawai

Bo Mi Lee

Jae-Hyoung Lee

Kazumasa Sunouchi

Guk Cheon Kim

Kei Yakushiji

Yang Kon Kim

Nobuyuki Ogata

Young-Min Eeh

Tomomasa Ueda

Atsuko Sakata

Naoki Morishita

Keiji Hosotani

Katsumi Suzuki

Naoko Kihara

Kazuhiro Tomioka

Daisuke Ikeno

Akifumi Gawase

Hiroki Tokuhira

Taiga Isoda

Shuichi Tsubata

Cha-Deok Dong

Bo-Mi Lee

Ki Seon Park

Shigemi Mizukami

Shigeto Fukatsu

Terunobu Miyazaki

Takeshi Iwasaki

Yasuo Ando

Hironobu Furuhashi

Mikihiko Oogane

Won-joon Choi

Ryohei Kitao

Daisuki Watanbe

Wu Feng

Masatoshi Yoshkawa

Yoshitomo Kobayashi

Yuta Konno

Tomomi Funayama

Kohei Nagata

A magnetic memory device including a first memory cell which includes a first stacked structure including a magnetic layer and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer. Each of the first stacked structure and the second stacked structure includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A concentration of iron (Fe) contained in the first magnetic layer included in the first stacked structure and a concentration of iron (Fe) contained in the first magnetic layer included in the second stacked structure are different from each other.

Magnetic memory device

A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

Film forming apparatus and film forming method

A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SiTeN. The x, y, and z of the SiTeNsatisfy 0&#x3c;x&#x2264;35, 15&#x2264;y&#x2264;50, and 50&#x3c;z&#x2264;85, satisfy 0&#x3c;x&#x2264;45, 15&#x2264;y&#x2264;55, and 40&#x3c;z&#x2264;85, or satisfy 0&#x3c;x&#x2264;55, 15&#x2264;y&#x2264;65, and 30&#x3c;z&#x2264;85.

Selector and non-volatile storage device

A magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; and a first layer provided at a side of the first ferromagnetic layer opposite to a side of the first ferromagnetic layer at which the non-magnetic layer is provided. The first layer includes a rare-earth element and the first layer has a region including boron (B) at a proportion higher than a proportion of boron (B) in the first ferromagnetic layer.

Magnetic storage device

According to one embodiment, a variable resistance element includes a first electrode, a second electrode, and a variable resistance layer and a tellurium-containing compound layer disposed between the first electrode and the second electrode. The tellurium-containing compound layer contains tellurium, oxygen, and at least one element selected from tin, copper, and bismuth. In some examples, the tellurium-containing compound layer can function as a switching layer in a memory cell structure.

Variable resistance element

A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.

Semiconductor device having rare earth oxide layer and method of manufacturing the same

According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.

A nonvolatile storage device includes first and second interconnections and a memory cell between the first and second interconnections. The memory cell includes a storage element, a first switch, and a second switch. The first switch has two terminals and transitions from an off-state to an on-state when a first threshold voltage is applied between its terminals and then voltage between the terminals falls to a first hold voltage. The second switch has two terminals and transitions from an off-state to an on-state when a second threshold voltage is applied between its terminals and then voltage between the terminals falls to a second hold voltage. An off-current of the first switch is less than an off-current of the second switch. The first threshold voltage is greater than the second threshold voltage, which is greater than the first hold voltage, which is greater than or equal to the second hold voltage.

Nonvolatile storage device

According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first surface in contact with the nonmagnetic layer and a second surface on an opposite side to the first surface, a diameter of the second surface of the first magnetic layer is less than a diameter of the first surface of the first magnetic layer and is 10 nm or more, and a ratio of a height of the first magnetic layer to the diameter of the second surface of the first magnetic layer is 0.9 or more.

Magnetic memory device having an incline side surface

According to one embodiment, a magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element including: a first ferromagnetic layer; a second ferromagnetic layer; a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a second non-magnetic layer at an opposite side of the first non-magnetic layer relative to the first ferromagnetic layer; and a third non-magnetic layer at an opposite side of the first ferromagnetic layer relative to the second non-magnetic layer. The second non-magnetic layer including rare-earth oxide, and the third non-magnetic layer including ruthenium (Ru) or molybdenum (Mo).

A memory device includes a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers. The memory device also includes a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a write current to the magnetoresistive element. A first write current in the first writing includes a first pulse and a second pulse added to the first pulse. A width of the second pulse is smaller than a width of the first pulse, and a current level of the second pulse is different from a current level of the first pulse.

Magnetoresistive memory device with different write pulse patterns

According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

Magnetic device and manufacturing method of magnetic device

According to one embodiment, a device includes an element including: a first stacked; a first nonmagnet on the first stacked; a second stacked on the first nonmagnet; a second nonmagnet on the second stacked; and a first magnet on the second nonmagnet. The second stacked including: a second magnet in contact with the second nonmagnet, including Fe and Co; a third nonmagnet at an opposite side of the second nonmagnet relative to the second magnet, including Mo or W; and a third magnet on the first nonmagnet, in contact with the third nonmagnet, including Fe and Co. An atomic ratio of Fe in the third magnet is lower than an atomic ratio of Fe in the second magnet.

Magnetic storage device with a stack of magnetic layers including iron (Fe) and cobalt (co)

According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.

Semiconductor storage device

Growing community of inventors

Yokohama, Japan

Toshihiko Nagase