The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Mar. 13, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Toshihiko Nagase, Kuwana Mie, JP;

Daisuke Watanabe, Yokkaichi Mie, JP;

Koji Ueda, Kawasaki Kanagawa, JP;

Tadashi Kai, Yokohama Kanagawa, JP;

Kazumasa Sunouchi, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01L 43/12 (2006.01); H01F 41/34 (2006.01); H01L 45/00 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/224 (2013.01); G11C 11/161 (2013.01); H01F 10/3254 (2013.01); H01F 41/34 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01L 43/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01);
Abstract

According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.


Find Patent Forward Citations

Loading…