The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Sep. 24, 2021
Intel Corporation, Santa Clara, CA (US);
Chia-Ching Lin, Portland, OR (US);
Kaan Oguz, Portland, OR (US);
Sou-Chi Chang, Portland, OR (US);
Arnab Sen Gupta, Hillsboro, OR (US);
I-Cheng Tung, Hillsboro, OR (US);
Ian A. Young, Olympia, WA (US);
Matthew V. Metz, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Sudarat Lee, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments described herein may be related to apparatuses, processes, and techniques related MIM capacitors that have a multiple trench structure to increase a charge density, where a dielectric of the MIM capacitor includes a perovskite-based material. In embodiments, a first electrically conductive layer may be coupled with a top metal layer of the MIM, and/or a second conductive layer may be coupled with a bottom metal layer of the MIM to reduce RC effects. Other embodiments may be described and/or claimed.