The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Dec. 23, 2020
Intel Corporation, Santa Clara, CA (US);
Arnab Sen Gupta, Hillsboro, OR (US);
Urusa Alaan, Hillsboro, OR (US);
Justin Weber, Portland, OR (US);
Charles C. Kuo, Union City, CA (US);
Yu-Jin Chen, Hillsboro, OR (US);
Kaan Oguz, Beaverton, OR (US);
Matthew V. Metz, Portland, OR (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Prashant Majhi, San Jose, CA (US);
Brian S. Doyle, Portland, OR (US);
Van H. Le, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include semiconductor devices with Schottky diodes in a back end of line stack. In an embodiment, a semiconductor device comprises a semiconductor layer, where transistor devices are provided in the semiconductor layer, and a back end stack over the semiconductor layer. In an embodiment, a diode is in the back end stack. In an embodiment, the diode comprises a first electrode, a semiconductor region over the first electrode, and a second electrode over the semiconductor region. In an embodiment, a first interface between the first electrode and the semiconductor region is an ohmic contact, and a second interface between the semiconductor region and the second electrode is a Schottky contact.