Abhishek A Sharma

Hillsboro, OR, United States of America

Abhishek A Sharma

This inventor holds 268 USPTO granted patents and 212 published patent applications and 4 EPO patents, primarily in Memory Devices (CPC class H01L29-7869). Top assignees: Intel Corporation, Intel Corporatiion, Other. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abhishek A Sharma. Retrieved from https://idiyas.com/inventor/abhishek-a-sharma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 268 

% Patents Active = 89.6

 

Average Co-Inventor Count = 5.6

ph-index = 8

Forward Citations = 281(Granted Patents)

Forward Citations (Not Self Cited) = 172(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Noida, IN (2021)
  • Sunnyvale, CA (US) (2021 - 2022)
  • Hillsboro, OR (US) (2019 - 2024)
  • Portland, OR (US) (2023 - 2024)

Company Filing History:


Years Active: 2019-2026

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Areas of Expertise:
Stacked RAM
Transistor Architectures
Hysteretic Memory
Vertical Transistors
Capacitor Connections
Integrated Circuits
Cooling Approaches
Memory Arrays
Embedded DRAM
Hybrid Manufacturing
Memory Cells
Dielectric Layers
268 patents (USPTO):Explore Patents

Title: Abhishek Sharma: Innovator with a Strong Patent Portfolio

Introduction:

Abhishek Sharma is an accomplished inventor based in Hillsboro, Oregon, with a strong background in semiconductor device technologies. With an impressive portfolio of 146 patents, Abhishek has made significant contributions to the field. His latest patents demonstrate his expertise in FinFET transistor-based resistive random access memory (RRAM) and the application of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits.

Latest Patents:

Abhishek Sharma's recent patents highlight his innovative work in semiconductor device technologies. One of his latest patents involves the development of a FinFET transistor-based RRAM memory cell. This technology combines a FinFET transistor structure with a resistive switching material layer, enabling enhanced storage capabilities and improved performance.

Another notable invention relates to the utilization of BEOL capacitors in CIM circuits for implementing neural networks. One embodiment integrates an embedded dynamic random access memory (eDRAM) array with the CIM circuit, allowing efficient mathematical computations within the memory array. Abhishek's patents also explore the use of switched capacitor circuits and ferroelectric BEOL capacitors to enhance the functionality and storage capacity of CIM circuits.

Career Highlights:

Abhishek Sharma has a fruitful career in the semiconductor industry, with notable employment at Intel Corporation. His work at Intel, a renowned technology company, has provided him with the opportunity to contribute to various advancements in semiconductor device technologies. Abhishek's inventions have not only enriched his personal patent portfolio but have also contributed to pushing the boundaries of innovation in the industry.

Collaborations:

During his career, Abhishek has collaborated with esteemed professionals in the field. Two of his well-known co-workers include Van H Le and Ravi Pillarisetty. Collaborative efforts with experts like these bring together diverse skill sets and perspectives, further enhancing the innovative potential of the projects Abhishek has been involved in.

Conclusion:

Abhishek Sharma is an accomplished inventor and innovator known for his significant contributions to semiconductor device technologies. His strong patent portfolio, with 146 patents to his name, showcases his expertise in areas such as FinFET-based RRAM and the incorporation of BEOL capacitors in CIM circuits. Abhishek's career highlights at Intel Corporation have further cemented his position as an influential figure in the industry. With his dedication to pushing the boundaries of innovation, we can expect more exciting advancements from Abhishek Sharma in the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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