The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Dec. 17, 2021
Intel Corporation, Santa Clara, CA (US);
Chia-Ching Lin, Portland, OR (US);
Tanay A. Gosavi, Portland, OR (US);
Uygar E. Avci, Portland, OR (US);
Sou-Chi Chang, Portland, OR (US);
Hai Li, Portland, OR (US);
Dmitri Evgenievich Nikonov, Beaverton, OR (US);
Kaan Oguz, Portland, OR (US);
Ashish Verma Penumatcha, Beaverton, OR (US);
John J. Plombon, Portland, OR (US);
Ian Alexander Young, Olympia, WA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A first type of ferroelectric capacitor comprises electrodes and an insulating layer comprising ferroelectric oxides. In some embodiments, the electrodes and the insulating layer comprise perovskite ferroelectric oxides. A second type of ferroelectric capacitor comprises a ferroelectric insulating layer comprising certain monochalcogenides. Both types of ferroelectric capacitors can have a coercive voltage that is less than one volt. Such capacitors are attractive for use in low-voltage non-volatile embedded memories for next-generation semiconductor manufacturing technologies.